Type Designator: STW8NB100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 190 W
Maximum Drain-Source Voltage |Vds|: 1000 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 7.3 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 68 nC
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 275 pF
Maximum Drain-Source On-State Resistance (Rds): 1.45 Ohm
Package: TO-247
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